Influence of annealing on the lateral homogeneity of Ti/InAlAs Schottky barriers
- 作者: Genze I.Y.1,2, Aksenov M.S.1,2, Dmitriev D.V.1
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隶属关系:
- Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
- Novosibirsk National Research State University
- 期: 卷 88, 编号 9 (2024)
- 页面: 1473-1477
- 栏目: Quantum Optics and Quantum Technologies
- URL: https://rjsvd.com/0367-6765/article/view/681835
- DOI: https://doi.org/10.31857/S0367676524090209
- EDN: https://elibrary.ru/OCQTIC
- ID: 681835
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详细
The influence of temperature (300–450 °C) and time (0–20 min) of annealing on the parameters (barrier height, ideality coefficient) and homogeneity of Au/Pt/Ti/i(n)-In0.52Al0.48As(001) Schottky barriers was studied. The homogeneity of the Schottky barriers was determined by analyzing the temperature dependences of the parameters in the range of 80–350 K, as well as Richardson plots within the framework of the Tung model.
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作者简介
I. Genze
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences; Novosibirsk National Research State University
编辑信件的主要联系方式.
Email: genze@isp.nsc.ru
俄罗斯联邦, Novosibirsk; Novosibirsk
M. Aksenov
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences; Novosibirsk National Research State University
Email: genze@isp.nsc.ru
俄罗斯联邦, Novosibirsk; Novosibirsk
D. Dmitriev
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: genze@isp.nsc.ru
俄罗斯联邦, Novosibirsk
参考
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