Influence of annealing on the lateral homogeneity of Ti/InAlAs Schottky barriers
- Authors: Genze I.Y.1,2, Aksenov M.S.1,2, Dmitriev D.V.1
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Affiliations:
- Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
- Novosibirsk National Research State University
- Issue: Vol 88, No 9 (2024)
- Pages: 1473-1477
- Section: Quantum Optics and Quantum Technologies
- URL: https://rjsvd.com/0367-6765/article/view/681835
- DOI: https://doi.org/10.31857/S0367676524090209
- EDN: https://elibrary.ru/OCQTIC
- ID: 681835
Cite item
Abstract
The influence of temperature (300–450 °C) and time (0–20 min) of annealing on the parameters (barrier height, ideality coefficient) and homogeneity of Au/Pt/Ti/i(n)-In0.52Al0.48As(001) Schottky barriers was studied. The homogeneity of the Schottky barriers was determined by analyzing the temperature dependences of the parameters in the range of 80–350 K, as well as Richardson plots within the framework of the Tung model.
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About the authors
I. Yu. Genze
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences; Novosibirsk National Research State University
Author for correspondence.
Email: genze@isp.nsc.ru
Russian Federation, Novosibirsk; Novosibirsk
M. S. Aksenov
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences; Novosibirsk National Research State University
Email: genze@isp.nsc.ru
Russian Federation, Novosibirsk; Novosibirsk
D. V. Dmitriev
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: genze@isp.nsc.ru
Russian Federation, Novosibirsk
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