Influence of annealing on the lateral homogeneity of Ti/InAlAs Schottky barriers

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The influence of temperature (300–450 °C) and time (0–20 min) of annealing on the parameters (barrier height, ideality coefficient) and homogeneity of Au/Pt/Ti/i(n)-In0.52Al0.48As(001) Schottky barriers was studied. The homogeneity of the Schottky barriers was determined by analyzing the temperature dependences of the parameters in the range of 80–350 K, as well as Richardson plots within the framework of the Tung model.

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Sobre autores

I. Genze

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences; Novosibirsk National Research State University

Autor responsável pela correspondência
Email: genze@isp.nsc.ru
Rússia, Novosibirsk; Novosibirsk

M. Aksenov

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences; Novosibirsk National Research State University

Email: genze@isp.nsc.ru
Rússia, Novosibirsk; Novosibirsk

D. Dmitriev

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences

Email: genze@isp.nsc.ru
Rússia, Novosibirsk

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2. Fig. 1. Dependence of the barrier height φb (a) and the ideality coefficient n (b) on the annealing time t at temperatures of 300 (curve 1), 350 (curve 2) and 400 °C (curve 3). Straight lines of the dependences of current I on voltage V for Ti/InAlAs BS (c) before annealing (curve 1), as well as annealed for 20 min at temperatures of 300 °C (curve 2), 350 °C (curve 3), 400 °C (curve 4) and 450 °C (curve 5).

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3. Fig. 2. Straight lines of the current I dependence on voltage V for Ti/InAlAs BS annealed at 300 °C (a) and 400 °C (b) for 20 min, measured at temperatures of 80 K, then from 100 to 350 with a step of 25 K.

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4. Fig. 3. Temperature dependences of the barrier height (φb-T, curve 1) and the ideality coefficient (n-T, curve 2) for Ti/InAlAs BS annealed at 300 °C (a) and 400 °C (b) for 20 min. The φb-n dependence is shown in the insets.

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5. Fig. 4. Richardson plots for Ti/InAlAs BS annealed at 300 °C (a) and 400 °C (b) for 20 min, within the framework of the TE theory (empty squares) and the Tang model (filled squares).

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