Enviar artigo por via de e-mail Perspectives of electron-beam and ion-beam lithography development in Russia
- Autores: Zaitsev S.I.1, Irzhak D.V.1, Il’in A.I.1, Knyazev M.A.1, Roshchupkin D.V.1, Grachev V.P.2, Kurbatov V.G.2, Malkov G.V.2
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Afiliações:
- Institute of Microelectronics Technology and High Purity Materials Russian Academy of Sciences
- Federalo Research Center of Problems of Chemical Physics and Medical Chemistry RAS
- Edição: Volume 54, Nº 4 (2025)
- Páginas: 281-290
- Seção: ЛИТОГРАФИЯ
- URL: https://rjsvd.com/0544-1269/article/view/690993
- DOI: https://doi.org/10.31857/S0544126925040024
- EDN: https://elibrary.ru/qgohjo
- ID: 690993
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Resumo
The development of national resists for electron-beam and ion-beam lithography processes is reviewed. Positive resists based on polymethyl methacrylate allow to create nanoscale structures. Moreover, the possibility of using a combination of the created resists as bilayer resist is demonstrated. The perspectives of the development of national processes of electron-beam and ion-beam lithography are also demonstrated. At the present moment own national technological processes of electron-beam and ion-beam lithography are at the stage of demonstrators. In the near future, national electron-beam and ion-beam lithography devices will be developed. It will take significantly more time to organize production of national ion-beam lithography equipment.
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Sobre autores
S. Zaitsev
Institute of Microelectronics Technology and High Purity Materials Russian Academy of Sciences
Email: rochtch@iptm.ru
Moscow, Russia
D. Irzhak
Institute of Microelectronics Technology and High Purity Materials Russian Academy of Sciences
Email: rochtch@iptm.ru
Moscow, Russia
A. Il’in
Institute of Microelectronics Technology and High Purity Materials Russian Academy of Sciences
Email: rochtch@iptm.ru
Moscow, Russia
M. Knyazev
Institute of Microelectronics Technology and High Purity Materials Russian Academy of Sciences
Email: rochtch@iptm.ru
Moscow, Russia
D. Roshchupkin
Institute of Microelectronics Technology and High Purity Materials Russian Academy of Sciences
Email: rochtch@iptm.ru
Moscow, Russia
V. Grachev
Federalo Research Center of Problems of Chemical Physics and Medical Chemistry RAS
Email: rochtch@iptm.ru
Черноголовка, Россия
V. Kurbatov
Federalo Research Center of Problems of Chemical Physics and Medical Chemistry RAS
Email: rochtch@iptm.ru
Черноголовка, Россия
G. Malkov
Federalo Research Center of Problems of Chemical Physics and Medical Chemistry RAS
Autor responsável pela correspondência
Email: rochtch@iptm.ru
Черноголовка, Россия
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