Email this article MULTILAYER EPITAXIAL SILICON STRUCTURES WITH SUBMICRON LAYERS GROWN BY SUBLIMATION MOLECULAR BEAM EPITAXI
- Authors: Shengurov V.G.1, Titova A.M.1, Alyabina N.A.1, Chalkov V.Y.1, Denisov S.A.1, Zdoroveyshchev A.V.1
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Affiliations:
- Lobachevsky State University
- Issue: Vol 54, No 4 (2025)
- Pages: 339-344
- Section: TECHNOLOGIES
- URL: https://rjsvd.com/0544-1269/article/view/690999
- DOI: https://doi.org/10.31857/S0544126925040088
- EDN: https://elibrary.ru/QHQJOQ
- ID: 690999
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Abstract
Multilayer silicon diode structures with basic submicron layers of n- and p-types of conductivity were grown by sublimation molecular beam epitaxy. The distribution profiles of the charge carrier concentrations (electrons and holes) were determined by the volt-farad characteristics method. The use of silicon sublimation sources cut from silicon ingots doped with phosphorus or boron makes it possible to achieve a uniform distribution of charge carrier concentrations over the thickness of the layers and an extremely sharp profile at their boundary with the Si substrate. Such structures can be successfully used for the manufacture of diodes.
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About the authors
V. G. Shengurov
Lobachevsky State University
Email: shengurov@phys.unn.ru
Nizhny Novgorod, Russia
A. M. Titova
Lobachevsky State University
Email: asya_titova95@mail.ru
Nizhny Novgorod, Russia
N. A. Alyabina
Lobachevsky State University
Email: asya_titova95@mail.ru
Nizhny Novgorod, Russia
V. Yu. Chalkov
Lobachevsky State University
Email: asya_titova95@mail.ru
Nizhny Novgorod, Russia
S. A. Denisov
Lobachevsky State University
Email: asya_titova95@mail.ru
Nizhny Novgorod, Russia
A. V. Zdoroveyshchev
Lobachevsky State University
Author for correspondence.
Email: asya_titova95@mail.ru
Nizhny Novgorod, Russia
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