Mikroèlektronika

In this paper we review double lithography method with the usage of antispacer, which allows to form structures of critical layers with sub-193i lithographic dimensions that go beyond the single extreme ultraviolet lithography limits. We present a set of key parameters affecting the process productivity and a method for optimizing the lithographic process.

This paper describes the simulation of electron beam scattering in polymethylmethacrylate (PMMA) and silicon (Si) using Monte Carlo method. The simulation used various scattering models, including both elastic and inelastic models, with and without secondary electron generation taken into account. For each material, three combinations of scattering models were tested in simulation. As a result, the distributions of absorbed energy and scattering events along the coordinate were obtained. The analysis of these results revealed the characteristic features of each scattering model.

The problem of the electrical conductivity of a conducting channel at the boundary of a heterojunction or in a MD transistor is solved, considering the quantum theory of transfer processes. The thickness of the layer can be comparable to and less than the de Broglie wavelength of the charge carriers. The behavior of charge carriers is described by the quantum Liouville equation. The influence of surface scattering of charge carriers is considered through the Soffer boundary conditions. An expression for the electrical conductivity is obtained and its dependence on the strength of the transverse electric field and the roughness parameter of the boundary of the conducting channel with another semiconductor is analyzed. A comparative analysis of theoretical calculations with experimental data is carried out.

The article presents results of studying the formation processes of the composite material based on Ni nanostructures arrays – nanopillars or nanotubes embedded in thin porous anodic alumina by electrochemical deposition. Ni nanopillars were formed in the direct current mode (dc-deposition); nanotubes – in the alternating current mode (ac-deposition). Morphology analysis of these nanostructures shows that inner profile of the deposit and micromorphology of the nanostructure change with deposition duration and depend on the motion mode and diameter of hydrogen bubbles released under Ni electrodeposition. The morphology, structure, and electrochemical properties of the obtained composite materials were studied using scanning electron microscopy, atomic force microscopy, X-ray diffraction analysis, and the method of linear polarization in potentiodynamic mode. The obtained nanostructures can be used to fabricate planar electrodes for electrochemical biosensors and another nanodiagnostics and microelectronics devices

Films of negative photoresists (FR) AZ nLOF 2020, AZ nLOF 2070 and AZ nLOF 5510 with a thickness of 0.99–6.0 microns deposited on the surface of silicon wafers by centrifugation have been studied by the methods of microindentation and IR Fourier spectroscopy using a diffuse reflection module. It has been established that FR films behave like elastoplastic materials in which tensile elastic stresses are present. The most intense in the reflective absorption spectra of AZ nLOF photoresistive films are bands of valence vibrations of the aromatic ring (≈ 1500 cm^–1), pulsation vibrations of the aromatic ring carbon skeleton (double maximum ≈ 1595 and 1610 cm^–1), a wide structured band with several maxima in the range of 1050–1270 cm^–1 and a band with a maximum of ≈ 1430 cm^–1 due to vibrations of the benzene ring, associated with the CH₂ bridge. It is shown that the line corresponding to the vibrations of the CH₃ groups with a maximum at 2945 cm^–1 is caused by the solvent. The differences in the FR spectra of AZ nLOF 2020 and AZ nLOF 2070 are associated with the presence of a residual solvent in the films and the interaction of its molecules with the aromatic rings of the main FR component – phenol-formaldehyde.

This work presents the results of designing, constructing and testing the atomic layer deposition (ALD) platform for the synthesis of various semiconductor, dielectric, metallized and barrier thin-film structures with a thickness of < 100 nm. This ALD platform can be used in the field of micro- and nanoelectronics, with the possibility of in situ monitoring of mass and thickness growth processes with an accuracy of 0.3 ng/cm² and 0.037 Å/cycle, respectively. In this ALD platform, the number of imported components is minimized due to the use of electronics and vacuum fittings from domestic manufacturers, which in turn will significantly reduce the cost of this type of installation and make atomic layer deposition technology available to most scientific and educational organizations in Russia.