Dynamics of new phase formation in silicon during femtosecond laser ablation

Capa

Citar

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

We experimentally demonstrated (using micro-Raman spectroscopy and transmission electron microscopy) and through numerical modeling that when an intense (1013−1014 W/cm²) femtosecond (~100 fs) laser pulse impacts the surface of silicon with (111) orientation, new polymorphic phases Si-III and Si-XII are formed on the surface and in the volume, localized in lattice defects as well as at the periphery of the ablation crater. This localization of phases is caused by the multi-stage nature of laser-induced phase transitions in silicon, specifically, the phase transitions are initiated by a shock wave, resulting in a cascading transformation process on sub-nanosecond timescales: Si-I => Si-II => => Si-III/Si-XII. The phase transition Si-I => Si-II occurs at the front of the shock wave, while at the rear of the shock wave, a field of dynamic stresses arises in the material, allowing the phase transition Si-II => Si-III/Si-XII to occur. On sub-microsecond timescales, most of the new phases disappear as the material relaxes back to its original state.

Texto integral

Acesso é fechado

Sobre autores

Е. Mareev

Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”

Autor responsável pela correspondência
Email: mareev.evgeniy@physics.msu.ru
Rússia, Moscow

D. Khmelenin

Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”

Email: mareev.evgeniy@physics.msu.ru
Rússia, Moscow

F. Potemkin

Lomonosov Moscow State University

Email: potemkin@physics.msu.ru

Faculty of Physics

Rússia, Moscow

Bibliografia

  1. Mogni G., Higginbotham A., Gaál-Nagy K., Park N., Wark J.S. // Phys. Rev. B. 2014. V. 89. P. 064104. https://doi.org/10.1103/PhysRevB.89.064104
  2. Wippermann S., He Y., Vörös M., Galli G. // Appl. Phys. Rev. 2016. V. 3. P. 040807. https://doi.org/10.1063/1.4961724
  3. Hanfland M., Schwarz U., Syassen K., Takemura K. // Phys. Rev. Lett. 1999. V. 82. P. 1197. https://doi.org/10.1103/PhysRevLett.82.1197
  4. McBride E.E., Krygier A., Ehnes A. et al. // Nat. Phys. 2019. V. 15. P. 89. https://doi.org/10.1038/s41567-018-0290-x
  5. Мареев Е.И., Румянцев Б.В., Потемкин Ф.В. // Письма в ЖЭТФ. 2020. Т. 112. С. 780. https://doi.org/10.31857/s1234567820230111
  6. Budnitzki M., Kuna M. // J. Mechan. Phys. Solids. 2016. V. 95. P. 64. https://doi.org/10.1016/j.jmps.2016.03.017
  7. Chen H., Levitas V.I., Popov D., Velisavljevic N. // Nat. Commun. 2022. V. 13. P. 982. https://doi.org/10.1038/s41467-022-28604-1
  8. Daisenberger D., Wilson M., McMillan P.F. et al. // Phys. Rev. B. 2007. V 75. P. 224118. https://doi.org/10.1103/PhysRevB.75.224118
  9. Domnich V., Gogotsi Y. // Rev. Adv. Mater. Sci. 2002. V. 3. P. 1. https://www.ipme.ru/e-journals/RAMS/no_1302/domnich/domnich.pdf
  10. Zeng Z., Zeng Q., Mao W.L., Qu S. // J. Appl. Phys. 2014. V. 115. P. 103514. https://doi.org/10.1063/1.4868156
  11. Ovsyuk N.N., Lyapin S.G. // Appl. Phys. Lett. 2020. V. 116. P. 062103. https://doi.org/10.1063/1.5145246
  12. Sundaram S.K., Mazur E. // Nat. Mater. 2002. V. 1. P. 217. https://doi.org/10.1038/nmat767
  13. Vailionis A., Gamaly E.G., Mizeikis V. et al. // Nat. Commun. 2011. V. 2. P. 445. https://doi.org/10.1038/ncomms1449
  14. Mareev E.I., Lvov K.V., Rumiantsev B.V. et al. // Laser Phys. Lett. 2019. V. 17. P. 015402. https://doi.org/10.1088/1612-202X/ab5d23
  15. Butkus S. // J. Laser Micro/Nanoengineering. 2014. V 9. P. 213. https://doi.org/10.2961/jlmn.2014.03.0006
  16. Gorman M.G., Briggs R., McBride E.E. et al. // Phys. Rev. Lett. 2015. V. 115. P. 095701. https://doi.org/10.1103/PhysRevLett.115.095701
  17. Brown S.B., Gleason A.E., Galtier E. et al. // Sci. Adv. 2019. V. 5. P. eaau8044. https://doi.org/10.1126/sciadv.aau8044
  18. Potemkin F.V., Mareev E.I., Garmatina A.A. et al. // Rev. Sci. Instrum. 2021. V. 92. P. 053101. https://doi.org/10.1063/5.0028228
  19. Ковальчук М.В., Борисов М.М., Гарматина А.А. и др. // Кристаллография. 2022. Т. 67. № 5. С. 771. https://doi.org/10.31857/s0023476122050083
  20. Moser R., Domke M., Winter J. et al. // Adv. Opt. Technol. 2018. V. 7. P. 255. https://doi.org/10.1515/aot-2018-0013
  21. Mareev E., Obydennov N., Potemkin F. // Photonics. 2023. V. 10. P. 380. https://doi.org/10.3390/photonics10040380
  22. Mareev E.I., Potemkin F.V. // Int. J. Mol. Sci. 2022. V. 23. P. 2115. https://doi.org/10.3390/ijms23042115
  23. Норман Г.Э., Стариков С.В., Стегайлов В.В. // ЖЭТФ. 2012. Т. 141. С. 910. https://doi.org/10.1134/S1063776112040115
  24. Greathouse J.A. Two-Temperature (TTM) Molecular Dynamics. Standia National LAborotory, NNSA.
  25. Mareev E., Pushkin A., Migal E. et al. // Sci. Rep. 2022. V. 12. P. 7517. https://doi.org/10.1038/s41598-022-11501-4
  26. Yang J., Zhang D., Wei J. et al. // Micromachines. 2022. V. 13. P. 1119. https://doi.org/10.3390/mi13071119
  27. Taylor L.L., Scott R.E., Qiao J. // Opt. Mater. Express. 2018. V. 8. P. 648. https://doi.org/10.1364/ome.8.000648
  28. Liu J., Wu M., Sun Z. et al. // Appl. Surf. Sci. 2024. V. 661. P. 160022. https://doi.org/10.1016/j.apsusc.2024.160022
  29. An H., Wang J., Fang F., Jiang J. // Opt. Laser Technol. 2024. V. 171. P. 110427. https://doi.org/10.1016/j.optlastec.2023.110427
  30. Plimpton S. // J. Comput. Phys. 1995. V. 117. P. 1. https://doi.org/10.1006/jcph.1995.1039
  31. Pisarev V.V., Starikov S.V. // J. Phys.: Condens. Matter. 2014. V. 26. № 47. P. 475401. https://doi.org/10.1088/0953-8984/26/47/475401
  32. Norman G.E., Starikov S.V., Stegailov V.V. et al. // Contrib. Plasma Phys. 2013. V. 2. P. 129. https://doi.org/10.1002/ctpp.201310025
  33. Stukowski A. // Model. Simul. Mat. Sci. Eng. 2010. V. 18. № 1. P. 015012. https://doi.org/10.1088/0965-0393/18/1/015012
  34. Coleman S.P., Spearot D.E., Capolungo L. // Model. Simul. Mat. Sci. Eng. 2013. V. 21. P. 055020. https://doi.org/10.1088/0965-0393/21/5/055020
  35. Пашаев Э.М. Корчуганов В.Н., Субботин И.А. и др. // Кристаллография. 2021. Т. 66. С. 877. https://doi.org/10.31857/S0023476122050083
  36. Gogotsi Y., Baek C., Kirscht F. // Semicond. Sci. Technol. 1999. V. 10. P. 936. https://doi.org/10.1088/0268-1242/14/10/310
  37. Li H., Yu X., Zhu X. et al. // AIP Adv. 2021. V. 4. P. 045103. https://doi.org/10.1063/5.0034896
  38. Bradby J.E., Williams J.S., Wong-Leung J. et al. // Appl. Phys. Lett. 2000. V. 23. P. 3749. https://doi.org/10.1063/1.1332110
  39. Ikoma Y., Yamasaki T., Shimizu T. et al. // Mater. Characterization. 2020. V. 169. P. 110590. https://doi.org/10.1016/j.matchar.2020.110590
  40. Xuan Y., Tan L., Cheng B. et al. // J. Phys. Chem. C. 2020. V. 124. P. 27089. https://doi.org/10.1021/acs.jpcc.0c07686
  41. Cheng C. // Phys. Rev. B. 2003. V. 67. P. 134109. https://doi.org/10.1103/PhysRevB.67.134109
  42. Anzellini S., Wharmby M.T., Miozzi F. et al. // Sci. Rep. 2019. V. 9. P. 15537. https://doi.org/10.1038/s41598-019-51931-1
  43. Yin M.T. // Phys. Rev. B. 1984. V. 30. P. 1773. https://doi.org/10.1103/PhysRevB.30.1773
  44. Piltz R.O., MacLean J.R., Clark S.J. et al. // Phys. Rev. B. 1995. V. 52. P. 4072. https://doi.org/10.1103/PhysRevB.52.4072

Arquivos suplementares

Arquivos suplementares
Ação
1. JATS XML
Baixar
2. Fig. 1. Image of the region of action of the laser pulse on silicon, as well as Raman spectra in the frequency range of 250–475 cm−1: 1 – spectrum of undamaged silicon, 2 – spectrum of amorphous silicon, 3 – region where the peak characteristic of the Si-III phase at 430 cm−1 is recorded in the spectra, 4 – spectrum containing peaks of the Si-III and Si-XII phases, 5 – spectrum with nanosecond laser action on silicon. Rectangles in the microscopic image indicate the regions in which the corresponding spectra are measured.

Baixar (200KB)
Metadados
3. Fig. 2. TEM images of the laser-induced microcrater region: a – general view, dark areas on top are typical for amorphous silicon, oblique lines in the figures are lattice dislocations; b, c – enlarged areas marked with rectangles in Fig. a; g, d – electron diffraction patterns from areas marked with dots.

Baixar (694KB)
Metadados
4. Fig. 3. Visualization of the numerical simulation results – a cross-section of a 10 Å thick silicon sample along the laser pulse propagation axis (from left to right) (a): the brightness shows the atomic volume of the Si-I phases, compressed Si-I, Si-II and Si-XI, Si-III and Si-XII, and regions with lower density. The time delay for each image is indicated in the figure. Evolution of the dynamics of the rocking curve calculated for the near-surface region (b): the arrows indicate the peaks and atomic volumes characteristic of silicon phases other than Si-I.

Baixar (1MB)
Metadados
5. Fig. 4. Time dynamics of changes in the histogram of atomic volume distribution after laser exposure: a – three-dimensional heat map, b – histograms of atomic volume distribution for times of 2, 5, 10, 15, 20, 30 ps. The dashed line indicates the original histogram.

Baixar (150KB)
Metadados
6. Fig. 5. Schematic representation of the dynamics of laser-induced phase transitions in silicon.

Baixar (358KB)
Metadados

Declaração de direitos autorais © Russian Academy of Sciences, 2025