The Effect of Copper Content on the Formation of Silicon Suboxides Phases in Cu–Si Films Obtained by Ion-Beam Sputtering
- Authors: Barkov K.A.1, Terekhov V.A.1, Kersnovsky E.S.1, Polshin I.V.1, Ivkov S.A.1, Chukavin A.I.1,2, Rodivilov S.V.3, Buylov N.S.1,3, Nesterov D.N.1, Pobedinsky V.V.1,3, Pelagina A.K.1, Moiseev K.M.1,4, Nikonov A.E.5, Sitnikov A.V.5
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Affiliations:
- Voronezh State University
- Udmurt Federal Research Center of the Ural Branch of the Russian Academy of Sciences
- Research Institute of Electronic Technology
- Bauman Moscow State Technical University
- Voronezh State Technical University
- Issue: No 2 (2025)
- Pages: 91-100
- Section: Articles
- URL: https://rjsvd.com/1028-0960/article/view/686836
- DOI: https://doi.org/10.31857/S1028096025020129
- EDN: https://elibrary.ru/EHVYJT
- ID: 686836
Cite item
Abstract
Cu–Si systems are important for a wide range of technological applications. This work is devoted to the study of the influence of copper content on the formation of silicon oxide phases in Cu–Si films obtained by ion beam sputtering. According to X-ray diffraction and ultra-soft X-ray emission spectroscopy data in a film with a low copper content of ∼ 15 wt. % silicon is partially in an amorphous state, and partially oxidized, forming a SiO0.47 suboxide. In films with a high copper content, Cu ∼ 65 wt. % Cu3Si phase is formed, which leads to the formation of phases of SiO2 dioxide and SiO0.8 suboxide in both near-surface and deeper layers. X-ray photoelectron spectroscopy indicates the formation of predominantly silicon-oxygen tetrahedra of the Si-Si3O and SiO4 types for Cu ∼ 15 wt. % and more oxygen-rich Si-Si2O2 silicon-oxygen tetrahedra for Cu ∼ 65 wt. %, both on the surface and in deep layers of Cu–Si films.
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About the authors
K. A. Barkov
Voronezh State University
Author for correspondence.
Email: barkov@phys.vsu.ru
Russian Federation, Voronezh
V. A. Terekhov
Voronezh State University
Email: barkov@phys.vsu.ru
Russian Federation, Voronezh
E. S. Kersnovsky
Voronezh State University
Email: barkov@phys.vsu.ru
Russian Federation, Voronezh
I. V. Polshin
Voronezh State University
Email: barkov@phys.vsu.ru
Russian Federation, Voronezh
S. A. Ivkov
Voronezh State University
Email: barkov@phys.vsu.ru
Russian Federation, Voronezh
A. I. Chukavin
Voronezh State University; Udmurt Federal Research Center of the Ural Branch of the Russian Academy of Sciences
Email: barkov@phys.vsu.ru
Russian Federation, Voronezh; Izhevsk
S. V. Rodivilov
Research Institute of Electronic Technology
Email: barkov@phys.vsu.ru
Russian Federation, Voronezh
N. S. Buylov
Voronezh State University; Research Institute of Electronic Technology
Email: barkov@phys.vsu.ru
Russian Federation, Voronezh; Voronezh
D. N. Nesterov
Voronezh State University
Email: barkov@phys.vsu.ru
Russian Federation, Voronezh
V. V. Pobedinsky
Voronezh State University; Research Institute of Electronic Technology
Email: barkov@phys.vsu.ru
Russian Federation, Voronezh; Voronezh
A. K. Pelagina
Voronezh State University
Email: barkov@phys.vsu.ru
Russian Federation, Voronezh
K. M. Moiseev
Voronezh State University; Bauman Moscow State Technical University
Email: barkov@phys.vsu.ru
Russian Federation, Voronezh; Moscow
A. E. Nikonov
Voronezh State Technical University
Email: barkov@phys.vsu.ru
Russian Federation, Voronezh
A. V. Sitnikov
Voronezh State Technical University
Email: barkov@phys.vsu.ru
Russian Federation, Voronezh
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