Transport Properties of the Magnetic Topological Insulators Family (MnBi2Te4)(Bi2Te3)m (m = 0, 1, …, 6)

封面

如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

Systematic studies of magneto-transport properties of the whole (MnBi2Te4)(Bi2Te3)m family of magnetic topological insulators (m=0,1,...,6)">m=0,1,...,6) have been carried out. Temperature dependences of the resistivity, magnetoresistance and the Hall effect at low temperatures have been studied. When m increases, i.e., when the separation between 2D MnBi2Te4 magnetic layers becomes larger, the transition from antiferromagnetic to ferromagnetic state takes place. We have found that ferromagnetic state survives even in the samples with m=6">m=6, when 2D magnets are separated by six non-magnetic Bi2Te3 blocks.

作者简介

V. Zverev

Osipyan Institute of Solid State Physics, Russian Academy of Sciences

Email: zverev@issp.ac.ru
142432, Chernogolovka, Moscow region, Russia

N. Abdullaev

Baku State University

Email: zverev@issp.ac.ru
AZ1148, Baku, Azerbaijan

Z. Aliev

Baku State University

Email: zverev@issp.ac.ru
AZ1148, Baku, Azerbaijan

I. Amiraslanov

Baku State University

Email: zverev@issp.ac.ru
AZ1148, Baku, Azerbaijan

M. Otrokov

Centro Mixto CSIC-UPV/EHU;IKERBASQUE, Basque Foundation for Science

Email: zverev@issp.ac.ru
20018, Donostia-San Sebastian, Spain;48009, Bilbao, Spain

N. Mamedov

Baku State University

Email: zverev@issp.ac.ru
AZ1143, Baku, Azerbaijan

E. Chulkov

Universidad del Pa´ıs Vasco UPV/EHU;St. Petersburg State University

编辑信件的主要联系方式.
Email: zverev@issp.ac.ru
20080, Donostia-San Sebastián, Spain;198504, St. Petersburg, Russia

参考

  1. M. M. Otrokov, I. I. Klimovskikh, H. Bentmann et al. (Collaboration), Nature 576(19/26), 416 (2019).
  2. Y. Gong, J. Guo, J. Li et al. (Collaboration), Chin. Phys. Lett. 36, 076801 (2019).
  3. D. Zhang, M. Shi, T. Zhu, D. Xing, H. Zhang, and J. Wang, Phys. Rev. Lett. 122, 206401 (2019).
  4. J. Li, Y. Li, S. Du, Z. Wang, B.-L. Gu, and Y. Xu, Sci. Adv. 5, eaaw5685 (2019).
  5. M. M. Otrokov, I. P.Rusinov, M. Blanco-Rey, M. Ho mann, A. Yu. Vyazovskaya, S. V. Eremeev, A. Ernst, P. M. Echenique, A. Arnau, and E. V. Chulkov, Phys. Rev. Lett. 122, 107202 (2019).
  6. I. I. Klimovskikh, M. M. Otrokov, D. Estyunin et al. (Collaboration), npg Quantum Mater. 5, 54 (2020).
  7. Z. A. Jahangirli, E. H. Alizade, Z. S. Aliev, M. M. Otrokov, N. A. Ismayilova, S. N. Mammadov, I. R. Amiraslanov, N. T. Mamedov, G. S. Orudjev, M. B. Babanly, A. M. Shikin, and E. V. Chulkov, J. Vac. Sci. Technol. B 37, 062910 (2019).
  8. Z. S. Aliev, I. R. Amiraslanov, D. I. Nasonova, A. V. Shevelkov, N. A. Abdullayev, Z. A. Jahangirli, E. N. Orujlu, M. M. Otrokov, N. T. Mamedov, M. B. Babanly, and E. V. Chulkov, J. Alloys Compd. 789, 443 (2019).
  9. L. Ding, C. Hu, E. Feng, C. Jiang, I. A. Kibalin, A. Gukasov, M. F. Chi, N. Ni, and H. Cao, J. Phys. D: Appl. Phys. 54, 174003 (2021).
  10. J. Z. Wu, F. Liu, M. Sasase, K. Ienaga, Y. Obata, R. Yukawa, K. Horiba, H. Kumigashira, S. Okuma, T. Inoshita, and H. Hosono, Sci. Adv. 5, eaax9989 (2019).
  11. N. A. Abdullaev, I. R. Amiraslanov, Z. S. Aliev, Z. A. Jahangirli, I. Yu. Sklyadneva, E. G. Alizade, Y. N. Aliyeva, M. M. Otrokov, V. N. Zverev, N. T. Mamedov, and E. V. Chulkov, JETP Lett. 115, 749 (2022).
  12. F. Fei, S. Zhang, M. Zhang, S. A. Shah, F. Song, X. Wang, and B. Wang, Adv. Mater. 32, 1904593 (2019).
  13. C. Liu, Y. Wang, H. Li, Y. Wu, H. Li, Y. Wu, Y. Li, J. Li, K. He, Y. Xu, J. Zhang, and Y. Wang, Nat. Mater. 19, 522 (2020).
  14. M. Z. Shi, B. Lei, C. S. Zhu, D. H. Ma, J. H. Cui, Z. L. Sun, J. J. Ying, and X. H. Chen, Phys. Rev. B 100, 155144 (2019).
  15. J.-Q. Yan, Y. H. Liu, D. Parker, Y. Wu, A. A. Aczel, M. Matsuda, M. A. McGuire, and B. C. Sales, Phys. Rev. Materials 4, 054202 (2020).
  16. C. Hu, L. Ding, K. N. Gordon et al. (Collaboration), Sci. Adv. 6, eaba4275 (2020).
  17. I. R. Amiraslanov, Z. S. Aliev, P. A. Askerova, E. H. Alizade, Y. N. Aliyeva, N. A. Abdullayev, Z. A. Jahangirli, M. M. Otrokov, N. T. Mamedov, and E. V. Chulkov, Phys. Rev. B 106, 184108 (2022).
  18. A.Ruiz, N. P. Breznay, M. Li, R. D. McDonald, and R. J. McQueeney, Phys. Rev. B 103, 184429 (2021).
  19. J. Cai, D. Ovchinnikov, Z. Fei, M. He, T. Song, Z. Lin, C. Wang, D. Cobden, J.-H. Chu, Y.-T. Cui, C.-Z. Chang, D. Xiao, J. Yan, and X. Xu, Nat.Commun. 13, 1668 (2022).
  20. J.-Q. Yan, Q. Zhang, T. Heitmann, Z. Huang, K. Y. Chen, J.-G. Cheng, W. Wu, D. Vaknin, B. C. Sales, and R. J. McQueeney, Phys. Rev. Materials 3(6), 064202 (2019).
  21. A. Tan, V. Labrasherie, N. Kunchur, A. U. B. Wolter, J. Cornejo, J. Dufouleur, B. Bu�chner, A. Isaeva, and R. Giraud, Phys. Rev. Lett. 124, 197201 (2020).
  22. J. Shao, Y. Liu, M. Zeng et al. (Collaboration), Nano Lett. 21, 5874 (2021).
  23. A. Alfonsov, K. Mehlawat, A. Zeugner, A. Isaeva, B. Bu�chner, and V. Kataev, Phys. Rev. B 104, 195139 (2021).
  24. R. Lu, H. Sun, S. Kumar et al. (Collaboration), Phys. Rev. X 11, 011039 (2021).
  25. S. V. Eremeev, I. P.Rusinov, Yu. M. Koroteev, A. Yu. Vyazovskaya, M. Ho mann, P. M. Echenique, A. Ernst, M. M. Otrokov, and E. V. Chulkov, J. Phys. Chem. Lett. 12, 4268 (2021).
  26. M. Ahlberg, M. Marcellini, A. Taroni et al. (Collaboration), Phys. Rev. B 81, 214429 (2010).
  27. C. Yan, Y. Zhu, L. Miao et al. (Collaboration), Nano Lett. 22, 9815 (2022).
  28. A.-V. Tcakaev, B.Rubrecht, J. I. Facio et al. (Collaboration), Adv. Sci. 10, 2203239 (2023).

补充文件

附件文件
动作
1. JATS XML

版权所有 © Российская академия наук, 2023