Metal–Insulator Transition and Other Electronic Properties of AB-Stacked Bilayer Graphene Deposited on a Ferromagnetic Substrate
- Авторлар: Gobelko I.E.1, Rozhkov A.V.2, Dresvyankin D.N.3
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Мекемелер:
- Moscow Institute of Physics and Technology (National Research University)
- Institute for Theoretical and Applied Electrodynamics, Russian Academy of Sciences
- Skolkovo Institute of Science and Technology
- Шығарылым: Том 118, № 9-10 (11) (2023)
- Беттер: 689-696
- Бөлім: Articles
- URL: https://rjsvd.com/0370-274X/article/view/664228
- DOI: https://doi.org/10.31857/S1234567823210103
- EDN: https://elibrary.ru/SZVCBN
- ID: 664228
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