Enviar artigo por via de e-mail PT-Symmetric Microwave Photoconductivity in Heterostructures Based on the xCdxTe Topological Phase
- Autores: Chmyr' S.N.1, Kazakov A.S.1, Galeeva A.V.1, Dolzhenko D.E.1, Artamkin A.I.1, Ikonnikov A.V.1, Mikhaylov N.N.2, Dvoretskiy S.A.2, Bannikov M.I.3
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Afiliações:
- Faculty of Physics, Moscow State University
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Lebedev Physical Institute, Russian Academy of Sciences
- Edição: Volume 118, Nº 5-6 (9) (2023)
- Páginas: 341-345
- Seção: Articles
- URL: https://rjsvd.com/0370-274X/article/view/663068
- DOI: https://doi.org/10.31857/S1234567823170068
- EDN: https://elibrary.ru/JZVJHB
- ID: 663068
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Resumo
The PT-symmetric photoconductivity has been detected for the first time in microwave-irradiated heterostructures based on thick Hg1 − xCdxTe films with the CdTe content x corresponding to the topological phase although the magnetic field symmetry (T symmetry) and the symmetry in the positions of potential contact pairs (P symmetry) are not conserved separately. The microwave photoconductivity in similar heterostructures based on the trivial Hg1 − xCdxTe phase is both P- and T-symmetric.
Sobre autores
S. Chmyr'
Faculty of Physics, Moscow State University
Email: khokhlov@mig.phys.msu.ru
119991, Moscow, Russia
A. Kazakov
Faculty of Physics, Moscow State University
Email: khokhlov@mig.phys.msu.ru
119991, Moscow, Russia
A. Galeeva
Faculty of Physics, Moscow State University
Email: khokhlov@mig.phys.msu.ru
119991, Moscow, Russia
D. Dolzhenko
Faculty of Physics, Moscow State University
Email: khokhlov@mig.phys.msu.ru
119991, Moscow, Russia
A. Artamkin
Faculty of Physics, Moscow State University
Email: khokhlov@mig.phys.msu.ru
119991, Moscow, Russia
A. Ikonnikov
Faculty of Physics, Moscow State University
Email: khokhlov@mig.phys.msu.ru
119991, Moscow, Russia
N. Mikhaylov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: khokhlov@mig.phys.msu.ru
630090, Novosibirsk, Russia
S. Dvoretskiy
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: khokhlov@mig.phys.msu.ru
630090, Novosibirsk, Russia
M. Bannikov
Lebedev Physical Institute, Russian Academy of Sciences
Autor responsável pela correspondência
Email: khokhlov@mig.phys.msu.ru
119991, Moscow, Russia
Bibliografia
- M. Z. Hasan and C. L. Kane, Rev. Mod. Phys. 82, 3045 (2010).
- Y. Ando, J. Phys. Soc. Jpn. 82, 102001 (2013).
- O. Breunig and Y. Ando, Nat. Rev. Phys. 4, 184 (2022).
- H. Plank and S. D. Ganichev, Solid State Electronics 147, 44 (2018).
- K.-M. Dantscher, D. A. Kozlov, P. Olbrich, C. Zoth, P. Faltermeier, M. Lindner, G. V. Budkin, S. A. Tarasenko, V. V. Bel'kov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, D. Weiss, B. Jenichen, and S. D. Ganichev, Phys. Rev. B 92, 165314 (2015).
- K.-M. Dantscher, D. A. Kozlov, M. T. Scherr, S. Gebert, J. B¨arenf¨anger, M. V. Durnev, S. A. Tarasenko, V. V. Bel'kov, N. N. Mikhailov, S. A. Dvoretsky, Z. D. Kvon, J. Ziegler, D. Weiss, and S. D. Ganichev, Phys. Rev B 95, 201103 (2017).
- S. G. Egorova, V. I. Chernichkin, L. I. Ryabova, E. P. Skipetrov, L. V. Yashina, S. N. Danilov, S. D. Ganichev, and D. R. Khokhlov, Sci. Rep. 5, 11540 (2015).
- A. V. Galeeva, S. G. Egorova, V. I. Chernichkin, M. E. Tamm, L. V. Yashina, V. V.Rumyantsev, S. V. Morozov, H. Plank, S. N. Danilov, L. I. Ryabova, and D. R. Khokhlov, Semicond. Sci. Technol. 31, 095010 (2016).
- A. V. Galeeva, I. V. Krylov, K. A. Drozdov, A. F. Knjazev, A. V. Kochura, A. P. Kuzmenko, V. S. Zakhvalinskii, S. N. Danilov, L. I. Ryabova, and D. R. Khokhlov, Beilstein J. Nanotechnol. 8, 167 (2017).
- A. Rogalski, Rep. Prog. Phys. 68, 2267 (2005).
- M. Weiler, Semiconductors and semimetals, ed. by R. Willardson and A. Beer, Academic press, N.Y. (1981), v. 16, p. 119.
- M. Orlita, D. M. Basko, M. S. Zholudev, F. Teppe, W. Knap, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii, P. Neugebauer, C. Faugeras, A.-L. Barra, G. Martinez, and M. Potemski, Nat. Phys. 10, 233 (2014).
- A. V. Galeeva, A. S. Kazakov, A. I. Artamkin, L. I. Ryabova, S. A. Dvoretsky, N. N. Mikhailov, M. I. Bannikov, S. N. Danilov, and D. R. Khokhlov, Sci. Rep. 10, 2377 (2020).
- A. V. Galeeva, A. I. Artamkin, A. S. Kazakov, A. V. Ikonnikov, L. I. Ryabova, S. A. Dvoretsky, N. N. Mikhailov, M. I. Bannikov, S. N. Danilov, and D. R. Khokhlov, Sci. Rep. 11, 1587 (2021).
- A. S. Kazakov, A. V. Galeeva, A. I. Artamkin, A. V. Ikonnikov, L. I. Ryabova, S. A. Dvoretsky, N. N. Mikhailov, M. I. Bannikov, S. N. Danilov, and D. R. Khokhlov, Sci. Rep. 11, 11638 (2021).
- A. V. Galeeva, A. I. Artamkin, A. S. Kazakov, S. N. Danilov, S. A. Dvoretskiy, N. N. Mikhailov, L. I. Ryabova, and D. R. Khokhlov, Beilsten J. Nanotechnol. 9, 1035 (2018).
- K. K. Svitashev, S. A. Dvoretskiy, Y. G. Sidorov, V. A. Shvets, A. S. Mardezhov, I. E. Nis, V. S. Varavin, V. Liberman, and V. G. Remesnik, Crystal Research and Technology 29(7), 931 (1994).
- V. S. Varavin, S. A. Dvoretskiy, D. G. Ikusov, N. N. Mikhailov, V. G. Remesnik, G. Yu. Sidorov, Yu. G. Sidorov, P. N. Sizikov, and I. N. Uzhakov, Optoelectroncs, Instrumentation and Data Processing 49, 4 (2013).
- S. A. Dvoretsky, D. G. Ikusov, Z. D. Kvon, N. N. Mikhailov, V. G. Remesnik, R. N. Smirnov, Yu. G. Sidorov, and V. A. Shvets, Semiconductor Physics, Quantum Electronics & Optoelectronics 10, 47 (2007).
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