Growth and electron transport characteristics of epitaxial thin strontium iridate films

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Abstract

The results of a study of epitaxial thin films of strontium iridate with the compositions Sr2IrO4 and SrIrO3 obtained by laser ablation and direct current cathode sputtering, respectively, are presented. Data on the growth technology, crystal structure, electrophysical parameters are given, and the activation energy for low-defect dielectric Sr2IrO4 films is calculated.

About the authors

I. E. Moskal

Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; MIREA – Russian Technological University

Author for correspondence.
Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow; Russia, 107996, Moscow

K. E. Nagornykh

Moscow Institute of Physics and Technology

Email: ivan.moscal@yandex.ru
Russia, 141701, Dolgoprudny

A. M. Petrzhik

Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences

Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow

Yu. V. Kislinsky

Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences

Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow

K. I. Konstantinyan

Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences

Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow

A. V. Shadrin

Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; Moscow Institute of Physics and Technology

Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow; Russia, 141701, Dolgoprudny

G. A. Ovsyannikov

Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences

Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow

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Copyright (c) 2023 И.Е. Москаль, К.Е. Нагорных, А.М. Петржик, Ю.В. Кислинский, К.И. Константинян, А.В. Шадрин, Г.А. Овсянников