Мақаланы E-mail арқылы жіберу Investigation of heterostructures based on hafnium oxide
- Авторлар: Sharifullina Y.I.1, Gumarova I.I.1,2, Mamin R.F.2, Nedopekin O.V.1
-
Мекемелер:
- Kazan Federal University
- Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of the Russian Academy of Science
- Шығарылым: Том 87, № 4 (2023)
- Беттер: 580-586
- Бөлім: Articles
- URL: https://rjsvd.com/0367-6765/article/view/654439
- DOI: https://doi.org/10.31857/S0367676522701034
- EDN: https://elibrary.ru/MDCZEP
- ID: 654439
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
We presented ab initio calculations of bulk structures and thin films of hafnium oxide, and heterostructures based on hafnium oxide in the tetragonal phase and silicon, structural and electronic properties are investigated. The density of states spectra is considered, the results obtained are analyzed, and some of them are compared with previously obtained data (for the studied systems).
Авторлар туралы
Y. Sharifullina
Kazan Federal University
Хат алмасуға жауапты Автор.
Email: janesharifullina@yandex.ru
Russia, 420008, Kazan
I. Gumarova
Kazan Federal University; Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of the Russian Academy of Science
Email: janesharifullina@yandex.ru
Russia, 420008, Kazan; Russia, 420029, Kazan
R. Mamin
Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of the Russian Academy of Science
Email: janesharifullina@yandex.ru
Russia, 420029, Kazan
O. Nedopekin
Kazan Federal University
Email: janesharifullina@yandex.ru
Russia, 420008, Kazan
Әдебиет тізімі
- Gritsenko V.A., Perevalov T.V., Islamov D.R. // Phys. Reports. 2016. V. 613. P. 1.
- Song Ch., Kwon H. // Electronics. 2021. V. 10. Art. No. 2759.
- Воротилов К.А., Сигов А.С. // Нано- и микросист. техника. 2008. Т. 10. С. 30.
- Ishiwara H. // J. Nanosci. Nanotech. 2012. V. 12. Art. No. 7619-27.
- Mikolajick T., Slesazeck S., Mulaosmanovic H. et al. // J. Appl. Phys. 2021. V. 129. Art. No. 100901.
- Tsymbal E., Dagotto E., Eom C., Ramesh R. // In: Multifunctional oxide heterostructures. Oxford: Oxford University Press, 2012. P. 340.
- Sugibuchi K., Kurogi Y., Endo N. // J. Appl. Phys. 1975. V. 46. P. 2877.
- Muller J., Polakowski P., Muller S. et al. // Proc. NVMTS (Pittsburgh, 2016). P. 1.
- Mo F., Tagawa Y., Jin C. et al. // IEEE J. Solid-State Circuits. 2019. V. 11. P. 1.
- Zacharaki C., Tsipas P., Chaitoglou S. et al. // Appl. Phys. Lett. 2019. V. 114. Art. No. 112901.
- Lee Y., Son S., Ham W., Ahn S. // Materials. 2022. V. 15. Art. No. 2251.
- Chanthbouala A, Crassous A., Garcia V. et al. // Nature Nanotech. 2012. V. 7. P. 101.
- Garcia V., Fusil S., Bouzehouane K. et al. // Nature. 2009. V. 460. P. 81.
- Wang P., Yu S. // MRS Commun. 2020. V. 10. P. 538.
- Böscke T., Müller J., Bräuhaus D. et al. // Appl. Phys. Lett. 2011. V. 99. Art. No. 102903.
- Kisi E.H., Howard C.J. // Key Engin. Mater. 1998. V. 153. P. 1.
- Huan T.D., Sharma V., Rossetti G.A., Ramprasad R. // Phys. Rev. B. 2014. V. 90. Art. No. 064111.
- Perdew J.P., Burke K., Ernzerhof M. // Phys. Rev. Lett. 1996. V. 77. № 18. Art. No. 3865.
- Robertson J., Wallace R.M. // Mater. Sci. Engin. R. 2015. V. 88. P. 1.
- Afanas’ev V.V., Stesmans A., Chen F. et al. // Appl. Phys. Lett. 2002. V. 81. Art. No. 1053.
- Adelmann C., Sriramkumar V., Van Elshocht S. et al. // J. Appl. Phys. 2007. V. 91. Art. No. 162902.
- Kresse G., Furthmüller J. // Comp. Mater. Sci. 1996 V. 6. No. 1. P. 15.
- Kresse G., Furthmüller J. // Phys. Rev. B. 1996. V. 54. No. 16. Art. No. 11169.
- Kresse G., Joubert D. // Phys. Rev. B. 1999. V. 59. No. 3. Art. No. 1758.
- MedeA version 3.4. San Diego: Materials Design Inc., 2012.
- Laudadio E., Stipa P., Pierantoni L. et al. // Crystals. 2022. V. 12. P. 2.
Қосымша файлдар
