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Thermal stability of ferroelectric films based on hafnium-zirconium dioxide on silicon
- Authors: Popov V.P.1, Antonov V.A.1, Tikhonenko F.V.2, Myakonkikh A.V.1, Rudenko K.1
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Affiliations:
- Valiev Institute of Physics and Technology of the Russian Academy of Sciences
- Федеральное государственное бюджетное учреждение науки “Институт физики полупроводников имени А.В. Ржанова Сибирского отделения Российской академии наук”
- Issue: Vol 87, No 6 (2023)
- Pages: 867-872
- Section: Articles
- URL: https://rjsvd.com/0367-6765/article/view/654387
- DOI: https://doi.org/10.31857/S0367676523701508
- EDN: https://elibrary.ru/VMKDGC
- ID: 654387
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Abstract
The results are presented indicating an increase in thermal stability, as well as structural and electrophysical properties of obtained by plasma-stimulated atomic layer deposition (PEALD) 20 nm ferroelectric HfO2, Hf0.5Zr0.5O2 films with the inserts of Al2O3 monolayers and without them, in metal-ferroelectric-silicon mesa structures, promising for universal memory devices.
About the authors
V. P. Popov
Valiev Institute of Physics and Technology of the Russian Academy of Sciences
Author for correspondence.
Email: popov@isp.nsc.ru
Russia, 117218, Moscow
V. A. Antonov
Valiev Institute of Physics and Technology of the Russian Academy of Sciences
Email: popov@isp.nsc.ru
Russia, 117218, Moscow
F. V. Tikhonenko
Федеральное государственное бюджетное учреждение науки“Институт физики полупроводников имени А.В. Ржанова Сибирского отделения Российской академии наук”
Email: popov@isp.nsc.ru
Россия, Новосибирск
A. V. Myakonkikh
Valiev Institute of Physics and Technology of the Russian Academy of Sciences
Email: popov@isp.nsc.ru
Russia, 117218, Moscow
K. V. Rudenko
Valiev Institute of Physics and Technology of the Russian Academy of Sciences
Email: popov@isp.nsc.ru
Russia, 117218, Moscow
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