The energy position of size quantization levels in multiple HgCdTe quantum wells

N. N. Mikhailov; Михайлов Н. Н.; V. G. Remesnik; Ремесник В. Г.; V. Ya. Aleshkin; Алешкин В. Я.; S. A. Dvoretsky; Дворецкий С. А.; I. N. Uzhakov; Ужаков И. Н.; V. A. Shvets; Швец В. А.

doi:10.31857/S0367676523701491

The energy position of size quantization levels in multiple HgCdTe quantum wells

作者: Mikhailov N.N.¹, Remesnik V.G.¹, Aleshkin V.Y.², Dvoretsky S.A.¹, Uzhakov I.N.¹, Shvets V.A.¹^,3
隶属关系:
1. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
2. Institute for Physics of Microstructures of the Russian Academy of Sciences
3. Novosibirsk State University
期: 卷 87, 编号 6 (2023)
页面: 861-866
栏目: Articles
URL: https://rjsvd.com/0367-6765/article/view/654386
DOI: https://doi.org/10.31857/S0367676523701491
EDN: https://elibrary.ru/VMIDPK
ID: 654386

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
作者简介
参考
补充文件
统计

详细

The energy position of size quantization levels size levels in the multiple Hg_0.3Cd_0.7Te/HgTe quantum wells grown by molecular beam epitaxy on (013)GaAs substrate has been studied. The experimental and calculated values of the energy position of three size quantization levels are obtained.

作者简介

N. Mikhailov

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy
of Sciences

编辑信件的主要联系方式.
Email: mikhailov@isp.nsc.ru
Russia, 630090, Novosibirsk

V. Remesnik

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy
of Sciences

Email: mikhailov@isp.nsc.ru
Russia, 630090, Novosibirsk

V. Aleshkin

Institute for Physics of Microstructures of the Russian Academy of Sciences

Email: mikhailov@isp.nsc.ru
Russia, 603950, Nizhny Novgorod

S. Dvoretsky

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy
of Sciences

Email: mikhailov@isp.nsc.ru
Russia, 630090, Novosibirsk

I. Uzhakov

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy
of Sciences

Email: mikhailov@isp.nsc.ru
Russia, 630090, Novosibirsk

V. Shvets

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy
of Sciences; Novosibirsk State University

Email: mikhailov@isp.nsc.ru
Russia, 630090, Novosibirsk; Russia, 630090, Novosibirsk

参考

Lei W., Antoszewski J., Faraone L. // Appl. Phys. Rev. 2015. V. 2. Art. No. 041303.
Bhan R.K., Dhar V. // Opto-Electron. Rev. 2019. V. 27. No. 2. P. 174.
Rogalski A. // Rep. Prog. Phys. 2005. V. 68. No. 10. P. 2267.
Capper P., Garland J. Mercury cadmium telluride. Growth, properties and applications. Chichester: John Wiley & Sons Ltd, 2011. P. 556.
Erdem Arkun F., Edwall D.D., Ellsworth J. et al. // J. Electron. Mater. 2017. V. 46. No. 9. P. 5374.
Reddy M., Peterson J.M., Vang T. et al. // J. Electron. Mater. 2011. V. 40. No. 8. P. 1706.
Ziegler J., Wenisch J., Breiter R. et al. // J. Electron. Mater. 2014. V. 43. No. 8. P. 2935.
Варавин В.С., Дворецкий С.А., Михайлов Н.Н. и др. // Автометрия. Т. 56. № 5. С. 12; Varavin V.S., Dvoretskii S.A., Mikhailov N.N. et al. // Optoelectron. Instrum. Data Process. 2020. V. 56. No. 5. P. 456.
Schulman J.N., McGill T.C. // Appl. Phys. Lett. 1979. V. 34. No. 10. P. 663.
Aleshkin V.Y., Dubinov A.A., Morozov S.V. et al. // Opt. Mater. Express. 2018. V. 8. No. 5. P. 1349.
Ryzhii M., Otsuji T., Ryzhii V. et al. // Opto-Electron. Rev. 2019. V. 27. No. 2. P. 219.
Zhou Y.D., Becker C.R., Selamet Y. et al. // J. Electron. Mater. 2003. V. 32. No. 7. P. 608.
Grein C.H., Jung H., Singh R. et al. // J. Electron. Mater. 2005. V. 34. No. 6. P. 905.
Becker C.R., Latussek V., Pfeuffer-Jeschke A. et al. // Phys. Rev. B. V. 62. No. 15. Art. No. 10353.
Михайлов Н.Н., Швец В.А., Дворецкий С.А. и др. // Автометрия. 2003. Т. 39. № 2. С. 71.
Mikhailov N.N., Smirnov R.N., Dvoretsky S.A. et al. // Int. J. Nanotechnol. 2006. V. 3. No. 1. P. 120.
Сидоров Ю.Г., Дворецкий С.А., Михайлов Н.Н. и др. // Опт. журн. 2000. Т. 67. № 1. С. 39; Sidorov Yu.G., Dvoretski S.A., Mikhailov N.N. et al. // J. Opt. Technol. 2000. V. 67. No. 1. P. 31.
Сидоров Ю.Г., Дворецкий С.А., Варавин В.С. и др. // ФТП. 2001. Т. 35. № 9. С. 1092; Sidorov Yu.G., Dvoretskii S.A., Varavin V.S. et al. // Semiconductors. 2001. V. 35. No. 9. P. 1045.
Спесивцев Е.В., Рыхлицкий С.В., Швец В.А. // Автометрия. 2011. Т. 47. № 5. С. 5; Spesivtsev E.V., Rykhlitskii S.V., Shvets V.A. // Optoelectron. Instrument. Proс. 2011. V. 47. No. 5. P. 419.
Ржанов А.В., Свиташев К.К., Мардежов А.С., Швец В.А. // ДАН. 1987. Т. 297. № 3. С. 604.
Dvoretsky S., Mikhailov N., Sidorov Yu. et al. // J. Electron. Mater. V. 39. No. 7. P. 918.
Швец В.А., Михайлов Н.Н., Икусов Д.Г. и др. // Опт. и спектроск. 2019. Т. 127. № 8. С. 318; Shvets V.A., Mikhailov N.N., Ikusov D.G. et al. // Opt. Spectrosс. 2019. V. 127. No. 2. P. 340.
Швец В.А. // Опт. и спектроск. 2009. Т. 107. № 5. С. 822; Shvets V.A. // Opt. Spectrosс. 2009. V. 107. P. 780.
Швец В.А., Азаров И.А., Спесивцев Е.В. и др. // ПТЭ. 2016. № 6. С. 87; Shvets V.A., Azarov I.A., Spesivtsev E.V. et al. // Instrum. Exp. Tech. 2016. V. 59. No. 6. P. 857.
Zholudev M., Teppe F., Orlita M. et al. // Phys. Rev. B. 2012. V. 86. Art. No. 205420.
Pfeuffer-Jeschke A. PhD thesis. Germany: Universität Würzburg. Physikalisches Institut. 2000.
Minkov G.M., Aleshkin V.Ya., Rut O.E. et al. // Phys. Rev. B. 2017. V. 96. Art. No. 035310.
Novik E.G., Pfeuffer-Jeschke A., Jungwirth T. et al. // Phys. Rev. B. 2005. V. 72. Art. No. 035321.
Takita K., Onabe K., Tanaka S. // Phys. Stat. Sol. B. 1979. V. 92. P. 297.
Иконников А.В., Бовкун Л.С., Румянцев В.В. и др. // ФТП. 2017. Т. 51. № 12. С. 1588; Ikonnikov A.V., Bovkun L.S., Rumyantsev V.V. et al. // Semiconductors. 2017. V. 51. No. 12. P. 1531.