Changes in the intrinsic stimulated intense picosecond emission of the AlxGa1–xAs-GaAs-AlxGa1–xAs heterostructure due to the return of those part of the emission that was reflected from the end of the heterostructure to the active region
- Authors: Ageeva N.N.1, Bronevoi I.L.1, Krivonosov A.N.1
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Affiliations:
- Kotel’nikov Institute of Radioengeneering and Electronics RAS
- Issue: Vol 70, No 1 (2025)
- Pages: 65-72
- Section: ФИЗИЧЕСКИЕ ПРОЦЕССЫ В ЭЛЕКТРОННЫХ ПРИБОРАХ
- URL: https://rjsvd.com/0033-8494/article/view/684122
- DOI: https://doi.org/10.31857/S0033849425010071
- EDN: https://elibrary.ru/HJHWKG
- ID: 684122
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