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Changes in the intrinsic stimulated intense picosecond emission of the AlxGa1–xAs-GaAs-AlxGa1–xAs heterostructure due to the return of those part of the emission that was reflected from the end of the heterostructure to the active region
- Authors: Ageeva N.N.1, Bronevoi I.L.1, Krivonosov A.N.1
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Affiliations:
- Kotel’nikov Institute of Radioengeneering and Electronics RAS
- Issue: Vol 70, No 1 (2025)
- Pages: 65-72
- Section: ФИЗИЧЕСКИЕ ПРОЦЕССЫ В ЭЛЕКТРОННЫХ ПРИБОРАХ
- URL: https://rjsvd.com/0033-8494/article/view/684122
- DOI: https://doi.org/10.31857/S0033849425010071
- EDN: https://elibrary.ru/HJHWKG
- ID: 684122
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Abstract
Quenching of the generation of the intrinsic stimulated intense picosecond emission of the AlxGa1–xAs-GaAs-AlxGa1–xAs heterostructure, emerging from its end, has been detected. Quenching occurs when those part of the emission reflected from the end of the heterostructure returns to the active region. This new effect allows decreasing the emission duration by up to 7.5 times.
About the authors
N. N. Ageeva
Kotel’nikov Institute of Radioengeneering and Electronics RAS
Email: bil@cplire.ru
Russian Federation, Mokhovaya St., 11, build. 7, Moscow, 125009
I. L. Bronevoi
Kotel’nikov Institute of Radioengeneering and Electronics RAS
Author for correspondence.
Email: bil@cplire.ru
Russian Federation, Mokhovaya St., 11, build. 7, Moscow, 125009
A. N. Krivonosov
Kotel’nikov Institute of Radioengeneering and Electronics RAS
Email: bil@cplire.ru
Russian Federation, Mokhovaya St., 11, build. 7, Moscow, 125009
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