Application of high–frequency impedance model of metal–three-layer insulating gap-silicon structures to characteristics of real objects
- Authors: Belorusov D.A.1, Goldman E.I.1, Chucheva G.V.1
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Affiliations:
- Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences
- Issue: Vol 69, No 7 (2024)
- Pages: 664-668
- Section: НАНОЭЛЕКТРОНИКА
- URL: https://rjsvd.com/0033-8494/article/view/681463
- DOI: https://doi.org/10.31857/S0033849424070084
- EDN: https://elibrary.ru/HYVABJ
- ID: 681463
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