Influence of conditions for the formation of hafnium oxide films on the structural and electrical properties of heterostructures.

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Abstract

Hafnium oxide (HfO_2) films were synthesized onto silicon substrates by magnetron sputtering under various technological conditions. Research results presented structural composition of HfO2 films and electrical properties of heterostructures metal-insulator-semiconductor (Ni–HfO_2–Si) based on them.

About the authors

M. S. Afanas'ev

Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch

Email: gvc@ms.ire.rssi.ru
Fryazino, Moscow oblast, 141190 Russia

D. A. Belorusov

Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch

Email: gvc@ms.ire.rssi.ru
Fryazino, Moscow oblast, 141190 Russia

D. A. Kiselyov

Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch

Email: gvc@ms.ire.rssi.ru
Fryazino, Moscow oblast, 141190 Russia

V. A. Luzanov

Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch

Email: gvc@ms.ire.rssi.ru
Fryazino, Moscow oblast, 141190 Russia

G. V. Chucheva

Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch

Author for correspondence.
Email: gvc@ms.ire.rssi.ru
Fryazino, Moscow oblast, 141190 Russia

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Copyright (c) 2023 М.С. Афанасьев, Д.А. Белорусов, Д.А. Киселев, В.А. Лузанов, Г.В. Чучева