Gold alloying of ZnO crystals during their growth via the vapor-liquid-solid mechanism doping ZnO crystals with gold during their growth by the vapor-liquid-crystal method

P. L. Podkur; Подкур П. Л.; I. S. Volchkov; Волчков И. С.; L. A. Zadorozhnaya; Задорожная Л. А.; V. M. Kanevskii; Каневский В. М.

doi:10.31857/S0023476124020088

Gold alloying of ZnO crystals during their growth via the vapor-liquid-solid mechanism doping ZnO crystals with gold during their growth by the vapor-liquid-crystal method

Authors: Podkur P.L.¹, Volchkov I.S.¹, Zadorozhnaya L.A.¹, Kanevskii V.M.¹
Affiliations:
1. Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”
Issue: Vol 69, No 2 (2024)
Pages: 252-258
Section: REAL STRUCTURE OF CRYSTALS
URL: https://rjsvd.com/0023-4761/article/view/673205
DOI: https://doi.org/10.31857/S0023476124020088
EDN: https://elibrary.ru/YTCCGC
ID: 673205

Cite item

Full Text

Open Access
Restricted Access

Access granted
Restricted Access

Subscription Access

Abstract
Full Text
About the authors
References
Supplementary files
Statistics

Abstract

Arrays of ZnO microcrystals were grown on a silicon substrate (111) by applying the vapor deposition method with the vapor-liquid-crystal mechanism, where the liquid phase was gold. Differences in the obtained crystals at growth times of 5, 10, and 15 minutes are described. The lattice parameters of the microcrystals were calculated as the growth time increased: a = 3.316, c = 5.281; a = 3.291, c = 5.270; a = 3.286, c = 5.258 Å. The change in Au content in the microcrystals as they grew was determined, from 0.520 at. % at the substrate to 0.035 at. % on the crystal surfaces after 15 minutes of growth. Maps of the atomic element distribution are presented, and an the differences in lattice parameters of the obtained crystals compared to standard values are explained.

Full Text

References

Jayaprakash N., Suresh R., Rajalakshmi S. et al. // Mater. Technol. 2019. V. 35. P. 112. https://doi.org/10.1080/10667857.2019.1659533
Абдуев А.Х., Ахмедов А.К., Асваров А.Ш. // Письма в ЖТФ. 2014. Т. 40. С. 71.
Наумов А.В., Плеханов С.И. // Энергия: экономика, техника, экология. 2013. Т. 7. С. 14.
Rai P., Raj S., Ko K.-J. et al. // Sens. Actuators B Chem. 2013. V. 178. P. 107. https://doi.org/10.1016/j.snb.2012.12.031
Zhao X., Lou F., Li M. et al. // Ceram. Int. 2014. V. 40. P. 5507. https://doi.org/10.1016/j.ceramint.2013.10.140
Pagano R., Ingrosso C., Giancane G. et al. // Materials. 2020. V. 13. P. 2938. https://doi.org/10.3390/ma13132938
Ohtomo A., Kawasaki M., Ohkubo I. et al. // Appl. Phys. Lett. 1999. V. 75. P. 980. https://doi.org/10.1063/1.124573
Брискина Ч.М., Маркушев В.М., Задорожная Л.А. и др. // Квантовая электроника. 2022. Т. 52. С. 676.
Грузинцев А.Н., Волков В.Т., Емельченко Г.А. и др. // Физика и техника полупроводников. 2002. Т. 37. С. 330.
Li Z., Wang C. One-Dimensional Nanostructures Electrospinning: Technique and Unique Nanofibers. New York, Dordrecht, London: Springer Berlin Heidelberg, 2013. 141 p. https://doi.org/10.1007/978-3-642-36427-3
Ляпина О.А., Баранов А.Н., Панин Г.Н. и др. // Неорган. матер. 2008. Т. 44. С. 958.
Islam M.R., Rahman M., Farhad S.F.U. et al. // Surf. Interfaces. 2019. V. 16. P. 120. https://doi.org/10.1016/j.surfin.2019.05.007
Тарасов А.П., Брискина Ч.М., Маркушев В.М. и др. // Письма в ЖЭТФ. 2019. Т. 110. С. 750. https://doi.org/10.1134/S0370274X19230073
Тарасов А.П., Задорожная Л.А., Муслимов А.Э. и др. // Письма в ЖЭТФ. 2021. Т. 114. С. 596. https://doi.org/10.31857/S1234567821210035
Абдуев А.Х., Ахмедов А.К., Асваров А.Ш. и др. // Кристаллография. 2020. Т. 65. С. 489. https://doi.org/10.31857/S0023476120030029
Yamamoto T., Katayama-Yoshida H. // Jpn. J. Appl. Phys. 1999. V. 38. P. L166. https://doi.org/10.1143/JJAP.38.L166
Joseph M., Tabata H., Kawai T. // Jpn. J. Appl. Phys. 1999. V. 38. P. L1205. https://doi.org/10.1143/JJAP.38.L1205
Minegishi K., Koiwai Y., Kikuchi Y. et al. // Jpn. J. Appl. Phys. 1997. V. 36. P. L1453. https://doi.org/10.1143/JJAP.36.L1453
Георгобиани А.Н., Грузинцев А.Н., Волков В.Т. и др. // Физика и техника полупроводников. 2002. Т. 36. С. 284.
Sernelius B.E., Berggren K.-F., Jin Z.-C. et al. // Phys. Rev. B. 1988. V. 37. P. 10244. https://doi.org/10.1103/PhysRevB.37.10244
Yoon M.H., Lee S.H., Park H.L. et al. // J. Mater. Sci. Lett. 2002. V. 21. P. 1703. https://doi.org/10.1023/A:1020841213266
Nan T., Zeng H., Liang W. et al. // J. Cryst. Growth. 2012. V. 340. P. 83. https://doi.org/10.1016/j.jcrysgro.2011.12.047
Liu M., Qu S.W., Yu W.W. et al // Appl. Phys. Lett. 2010. V. 97. P. 231906. https://doi.org/10.1063/1.3525171
Khalid A., Ahmad P., Alharthi A.I. et al. // Materials. 2021. V. 14. P. 3223. https://doi.org/10.3390/ma14123223
Асваров А.Ш., Ахмедов А.К., Муслимов А.Э. и др. // Письма в ЖТФ. 2022. Т. 48. С. 51. https://doi.org/10.21883/PJTF.2022.02.51914.19001
Alsaad A.M., Ahmad A.A., Qattan I.A. et al. // Crystals. 2020. V. 10. P. 252. https://doi.org/10.3390/cryst10040252
Волчков И.С., Ополченцев А.М., Задорожная Л.А. и др. // Письма в ЖТФ. 2019. Т. 45. С. 7. https://doi.org/10.21883/PJTF.2019.13.47948.17808
González-Garnica M., Galdámez-Martínez A., Malagón F. et al. // Sens. Actuators B Chem. 2021. V. 337. P. 129765. https://doi.org/10.1016/j.snb.2021.129765
Редькин А.Н., Маковей З.И., Грузинцев А.Н. и др. // Неорган. матер. 2007. Т. 43. С. 301.
Zadorozhnaya L.A., Tarasov A.P., Volchkov I.S. et al. // Materials. 2022. V. 15. P. 8165. https://doi.org/10.3390/ma15228165

Supplementary files

Supplementary Files

Action

1. JATS XML

Download

2. Fig. 1. SEM images of ZnO:Au microcrystals and the distribution map of elements (Zn, Au, O) at growth time of 5 (a), 10 (b), 15 min (c). The insets show SEM images of cross sections of the samples