Measurement of Photoelectrophysical Characteristics of Conductive Layers of CsPbBr3 Colloidal Quantum Dots

D. N. Pevtsov; Певцов Д. Н.; G. A. Lochin; Лочин Г. А.; A. V. Katsaba; Кацаба А. В.; S. B. Brichkin; Бричкин С. Б.

doi:10.31857/S0023119323030117

Measurement of Photoelectrophysical Characteristics of Conductive Layers of CsPbBr3 Colloidal Quantum Dots

Authors: Pevtsov D.N.¹^,2, Lochin G.A.¹^,2, Katsaba A.V.²^,3, Brichkin S.B.¹
Affiliations:
1. Federal Research Center for Problems of Chemical Physics and Medicinal Chemistry, Russian Academy of Sciences
2. Moscow Institute of Physics and Technology (National Research University)
3. Lebedev Physical Institute, Russian Academy of Sciences
Issue: Vol 57, No 3 (2023)
Pages: 186-190
Section: PHOTONICS
URL: https://rjsvd.com/0023-1193/article/view/661502
DOI: https://doi.org/10.31857/S0023119323030117
EDN: https://elibrary.ru/KDYBIW
ID: 661502

Cite item

Full Text

Open Access
Restricted Access

Access granted
Restricted Access

Subscription Access

Abstract

Colloidal quantum dots of perovskites having the chemical composition CsPbBr3 have been synthesized. For these particles, the average size of an ensemble of particles and sample polydispersity have been determined by steady-state spectrofluorometry. Conducting layers were made from the obtained particles, and the electrophysical characteristics of these layers were measured. The hole nature of the conductivity was
established, and the layer conductivity (0.04 S/m), mobility (0.8 cm2/(V s)), and number concentration of free charge carriers (3.01 × 1021 m−3) were measured. In accordance with published data, the measured mobility value is higher by one to two orders of magnitude than published typical values. It is shown that high polydispersity has a weak effect on the electrophysical and transport characteristics in the resulting layers.

Keywords

colloidal quantum dots, inorganic perovskites, field effect transistor, charge carrier mobility

References

Deschler F., Price M., Pathak S., Klintberg L.E., Jarasch D.-D., Higler R., Hüttner S., Leijtens T., Stranks S.D., Snaith H.J., Atatüre M., Phillips R.T., Friend R.H. // J. Phys. Chem. Lett. 2014. V. 5. P. 1421.
Чикалова–Лузина О.П., Вяткин В.М., Щербаков И.П., Алешин А.Н. // Физика твердого тела. 2020. Т. 62. Вып. 8. С. 1333–1338.
Ahmad S., Kanaujia P.K., Beeson H.J., Abate A., Deschler F., Credgington D., Steiner U., Prakash G.V., Baumberg J.J. // ACS Appl Mater. Interfaces. 2015. № 7. P. 25227.
Ye J., Byranvand M.M., Martínez C.O., Hoye R.L., Saliba M., Polavarapu L. // Angewandte Chemie. № 133(40). P. 21804–21828.
Zhang C., Wang S., Li X., Yuan M., Turyanska L., Yang X. // Advanced Functional Materials. № 30(31). P. 1910582.
Kim J., Hu L., Chen H., Guan X., Anandan P.R., Li F., Wu T. // ACS Materials Letters. № 2(11). P. 1368-1374.
Zhou S., Zhou G., Li Y., Xu X., Hsu Y. J., Xu J., Lu X. // ACS Energy Letters. № 5(8). P. 2614-2623.
Иванчихина А.В., Пундиков К.С. // Химия высоких энергий. Т. 54. № 5. С. 361–369.
Gilmore R.H., Lee E.M., Weidman M.C., Willard A.P., Tisdale W.A. // Nano letters. № 17(2). P. 893–901.
Chang Lu, Marcus W. Wright, Xiao Ma et al. // Chemistry of Materials. 2019. V. 31 № 1. P. 62–67.
Jorick Maes, Lieve Balcaen, Emile Drijvers et al. // J. Phys. Chemi. Let. 2018. V. 9. № 11. P. 3093–3097.
Tovstun S.A., Gadomska A.V., Spirin M.G., Razumov V.F. // J. Luminescence. 2022. V. 252. P. 119420.
Mandal A., Ghosh A., Senanayak S.P., Friend R.H., Bhattacharyya S. // J. Phys. Chem. Let. 2021. V. 12(5).
Aleshin A.N., Shcherbakov I.P., Kirilenko D.A. et al. // Phys. Solid State. 2019. V. 61. P. 256–262.