Peculiarities of the formation of Dy/Co periodic multilayer systems upon magnetron sputtering

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Abstract

X-ray and magnetometry methods are used to show that, during magnetron sputtering of Dy/Co periodic multilayer systems, the DyCo2 and DyCo3 intermetallics form. The main reason for the phase formation of various intermetallics is the structural state of buffer layer, namely, its crystalline and amorphous state in the case of crystalline and glass substrate, respectively.

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About the authors

G. V. Prutskov

National Research Center “Kurchatov Institute”

Email: makarova@imp.uran.ru
Russian Federation, Moscow, 123182

I. A. Subbotin

National Research Center “Kurchatov Institute”

Email: makarova@imp.uran.ru
Russian Federation, Moscow, 123182

E. A. Kravtsov

Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences; Ural Federal University named after the First President of Russia B. N. Yeltsin

Email: makarova@imp.uran.ru
Russian Federation, Ekaterinburg, 620108; Ekaterinburg, 620002

M. V. Makarova

Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences; Ural Federal University named after the First President of Russia B. N. Yeltsin

Author for correspondence.
Email: makarova@imp.uran.ru
Russian Federation, Ekaterinburg, 620108; Ekaterinburg, 620002

M. A. Milyaev

Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences; Ural Federal University named after the First President of Russia B. N. Yeltsin

Email: makarova@imp.uran.ru
Russian Federation, Ekaterinburg, 620108; Ekaterinburg, 620002

E. M. Pashaev

National Research Center “Kurchatov Institute”

Email: makarova@imp.uran.ru
Russian Federation, Moscow, 123182

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Supplementary files

Supplementary Files
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1. JATS XML
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2. Fig. 1. Theoretical (solid) and experimental (dots) reflectometry curves for sample A and the residual curve σ. The inset shows a fragment of the curve in the range of 2.35–2.40 degrees.

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3. Fig. 2. Theoretical (solid) and experimental (dots) reflectometry curves for sample B and the residual curve σ. The inset shows a fragment of the curve in the range of 2.51–2.64 degrees.

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4. Fig. 3. Distribution profile of the real part of polarizability by depth for samples A (crystalline substrate) and B (amorphous substrate).

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5. Fig. 4. Distribution profile of the real part of polarizability within one period. The dashed lines indicate the values ​​of the real part of polarizability for pure elements Dy, Co and the average value of the real part of polarizability for the Dy 2 nm/Co 3 nm system.

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6. Fig. 5. Diffraction curves from samples A (crystalline substrate) and B (amorphous substrate) in 2θ-θ geometry.

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7. Fig. 6. Diffraction curves from samples A and B in the glancing reflection geometry at ω = 1°. The lines on the abscissa axis correspond to bulk Dy and Co.

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8. Fig. 7. Hysteresis loops for sample A with a crystalline Si substrate at different temperatures in a magnetic field directed perpendicular to the plane of the sample.

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9. Fig. 8. Hysteresis loops for sample B with a substrate made of amorphous glass SiO2 at different temperatures in a magnetic field directed perpendicular to the plane of the sample.

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