Formation a Layered Dissipative Structure in the Process of Directed Growth of an MgB 2  Crystal from a Melt

V. O. Esin; Есин В. О.

doi:10.31857/S001532302360140X

Formation a Layered Dissipative Structure in the Process of Directed Growth of an MgB₂ Crystal from a Melt

Authors: Esin V.O.¹
Affiliations:
1. Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
Issue: Vol 124, No 12 (2023)
Pages: 1237-1243
Section: СТРУКТУРА, ФАЗОВЫЕ ПРЕВРАЩЕНИЯ И ДИФФУЗИЯ
URL: https://rjsvd.com/0015-3230/article/view/663050
DOI: https://doi.org/10.31857/S001532302360140X
EDN: https://elibrary.ru/CMYIPG
ID: 663050

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Abstract

Abstract—

The interaction of components during high-temperature annealing of pressed magnesium and boron powders during the production of the superconducting compound MgB₂ is considered in works using standard synthesis technology and hot gas-static pressing technology. In a computer model of crystallization of a binary alloy, the influence of the diffusion of components in the region of the interphase boundary during crystal growth on the morphology of dissipative structures formed during phase transformation was studied. An analysis of the conditions and mechanism of the formation of a “layered” structure that appears during the crystallization of MgB₂ from a magnesium melt in the (Mg–B) system has been carried out.

Keywords

pressed powders, high-temperature annealing, reaction diffusion, MgB₂ synthesis, dissipative structures

About the authors

V. O. Esin

Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences

Author for correspondence.
Email: yesin@imp.uran.ru
Russia, 620108, Ekaterinburg

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