Coulomb Correlation Gap at Magnetic Tunneling between Graphene Layers

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The strong suppression of equilibrium magnetic tunneling in a graphene/hBN/graphene heterostructure caused by the Coulomb correlation gap in the tunneling density of states has been found. Comparison has shown that the suppression of the equilibrium tunneling conductivity G0">G0 in a high magnetic field with a decrease in the temperature and the dependence of the observed gap width Δ on the filling factor of Landau levels ν are qualitatively similar to the respective results of similar experiments in GaAs heterostructures and has confirmed our hypothesis concerning the nature of the effect. However, the determined gap width Δ is much larger than those measured in all previous works in semiconductor heterostructures probably because the cyclotron energy in graphene is much higher than that in GaAs in the region of low Landau levels.

作者简介

Yu. Khanin

Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences

Email: vdov62@yandex.ru
142432, Chernogolovka, Moscow region, Russia

E. Vdovin

Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences

Email: vdov62@yandex.ru
142432, Chernogolovka, Moscow region, Russia

S. Morozov

Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences

Email: vdov62@yandex.ru
142432, Chernogolovka, Moscow region, Russia

K. Novoselov

National University of Singapore

编辑信件的主要联系方式.
Email: vdov62@yandex.ru
Building S9, 4 Science Drive 2, 117544, Singapore, Singapore

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